1994. 6. 24
1/3
SEMICONDUCTOR
TECHNICAL DATA
KTC3198
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 0
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES
Excellent h
FE
Linearity
: h
FE
(2)=100(Typ.) at V
CE
=6V, I
C
=150mA
: h
FE
(I
C
=0.1mA)/h
FE
(I
C
=2mA)=0.95(Typ.).
Low Noise : NF=1dB(Typ.). at f=1kHz.
Complementary to KTA1266.
MAXIMUM RATING (Ta=25 )
TO-92
DIM
MILLIMETERS
A
B
C
D
F
G
H
J
K
L
4.70 MAX
4.80 MAX
3.70 MAX
0.45
1.00
1.27
0.85
0.45
14.00 0.50
0.55 MAX
2.30
D
1 2
3
B
A
J
K
G
H
F
F
L
E
C
E
C
M
N
0.45 MAX
M
1.00
N
1. EMITTER
2. COLLECTOR
3. BASE
+
_
ELECTRICAL CHARACTERISTICS (Ta=25 )
Note : h
FE
(1) Classification O:70 140, Y:120 240, GR:200 400, BL:300~700
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
60
V
Collector-Emitter Voltage
V
CEO
50
V
Emitter-Base Voltage
V
EBO
5
V
Collector Current
I
C
150
mA
Base Current
I
B
50
mA
Collector Power Dissipation
P
C
625
mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
I
CBO
V
CB
=60V, I
E
=0
-
-
0.1
A
Emitter Cut-off Current
I
EBO
V
EB
=5V, I
C
=0
-
-
0.1
A
DC Current Gain
h
FE
(1) (Note)
V
CE
=6V, I
C
=2mA
70
-
700
h
FE
(2)
V
CE
=6V, I
C
=150mA
25
100
-
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
=100mA, I
B
=10mA
-
0.1
0.25
V
Base-Emitter Saturation Voltage
V
BE(sat)
I
C
=100mA, I
B
=10mA
-
-
1.0
V
Transition Frequency
f
T
V
CE
=10V, I
C
=1mA
80
-
-
MHz
Collector Output Capacitance
C
ob
V
CB
=10V, I
E
=0, f=1MHz
-
2.0
3.5
pF
Base Intrinsic Resistance
rbb'
V
CB
=10V, I
E
=1mA, f=30MHz
-
50
-
Noise Figure
NF
V
CE
=6V, I
C
=0.1mA, Rg=10k , f=1kHz
-
1.0
10
dB
1994. 6. 24
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KTC3198
Revision No : 0
COLLECTOR CURRENT I (mA)
0
C
0
COLLECTOR-EMITTER VOLTAGE V (V)
CE
CE
C
I - V
30
DC CURRENT GAIN h
FE
1k
300
100
0.3
0.1
COLLECTOR CURRENT I (mA)
C
h - I
0.3
COLLECTOR-EMITTER SATURATION
3
CE(sat)
0.01
300
100
30
0.1
COLLECTOR CURRENT I (mA)
C
V - I
10
BASE CURRENT I (
A)
0.3
B
3k
0
BASE-EMITTER VOLTAGE V (V)
BE
I - V
40
80
120
160
200
240
1
2
3
4
5
6
7
COMMON
EMITTER
Ta=25 C
6.0
5.0
3.0
2.0
1.0
0.5
I =0.2mA
0
B
FE
C
1
3
10
30
50
100
300
500
10
CE(sat)
C
VOLTAGE V (V)
0.3
1
3
10
0.03
0.05
0.1
0.5
1
COMMON
EMITTER
I /I =10
C B
Ta=100 C
25 C
-25 C
CE
V =-10V
Ta=25 C
COMMON EMITTER
1k
500
100
50
30
-10
-3
-1
-0.3
TRANSITION FREQUENCY f (MHz)
E
T
f - I
E
EMITTER CURRENT I (mA)
-0.1
-30
-100
-300
10
T
3k
300
B
BE
0.2
0.4
0.6
0.8
1.0
1.2
1
3
30
100
300
1k
COMMON
V =6V
CE
EMITTER
Ta=
100
C
Ta=
25
C
Ta
=-25 C
COMMON
Ta=100 C
Ta=25 C
Ta=-25 C
V =6V
CE
CE
V =1V
EMITTER
0.1
5
3
1
0.5
30
10
3
1
C
BE(sat)
V - I
C
COLLECTOR CURRENT I (mA)
0.1
0.3
100
300
10
BE(sat)
BASE-EMITTER SATURATION
0.3
VOLTAGE V (V)
B
C
I /I =10
Ta=25 C
COMMON
EMITTER
1994. 6. 24
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KTC3198
Revision No : 0
C
P (mW)
0
COLLECTOR POWER DISSIPATION
0
AMBIENT TEMPERATURE Ta ( C)
Pc - Ta
h PARAMETER - I
C
COLLECTOR CURRENT I (mA)
0.1
0.3
30 50
0.1
h PARAMETER
C
10
3
1
0.3
1
3
10
30
100
300
1k
2k
COMMON EMITTER f=270Hz
V =12V
Ta=25 C
CE
BL
GR
Y
O
h
fe
BL
BL
BL
GR
GR
GR
Y
Y
Y
O
O
O
ie
h
x
h
x
h
x
k
ie
h
x
k
h
x
oe
10
re
-4
CE
h PARAMETER - V
2k
1k
300
100
30
10
3
1
0.3
h PARAMETER
0.1
10
30
100
300
3
0.5
COLLECTOR-EMITTER VOLTAGE V (V)
CE
1
COMMON EMITTER
I =2mA Ta=25 C f=270Hz
C
BL
GR
Y
O
fe
h
oe
h
-4
re
10
BL
BL
BL
GR
GR
GR
Y
Y
Y
O
O
O
25
50
75
100
125
150
175
100
200
300
400
500
600
700
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